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| SKM 145GB176D ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Inverse Diode Freewheeling Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units Remarks GB GAL 1 14-09-2006 RAA (c) by SEMIKRON SKM 145GB176D ... Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Freewheeling Diode Features Module Typical Applications Remarks This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL 2 14-09-2006 RAA (c) by SEMIKRON SKM 145GB176D ... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 2 Trench IGBT Modules SKM 145GB176D SKM 145GAL176D Preliminary Data Zth(j-c)D Features Typical Applications Remarks GB GAL 3 14-09-2006 RAA (c) by SEMIKRON SKM 145GB176D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 14-09-2006 RAA (c) by SEMIKRON SKM 145GB176D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 14-09-2006 RAA (c) by SEMIKRON SKM 145GB176D ... UL Recognized File no. E 63 532 6 14-09-2006 RAA (c) by SEMIKRON |
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